A newly hybrid technique for silicon wafer edge polishing of ultrasonic-vibration and chemical mechanical was presented, and the design, performance testing for the polishing tools, were discussed along with establishment of experimental system for the hybrid polishing. And then, the traditional chemical mechanical polishing, as well as the polishing tool with different forms of ultrasonic vibration was investigated on polish for the edge of silicon wafer. Experimental results showed that in the same polishing condition, the hybrid polishing of ultrasonic-elliptic-vibration and chemical mechanical has a favorable effect to improve wafer edge polishing. As ultrasonic-elliptic-vibration is put in polishing tool, the roughness Ra of silicon wafer polished surface decreases from the traditional polishing method of 0.059μm down to the 0.043μm, material removal increase by 22%, and the polished surface morphology is significantly improved.